FET100

今年也是FET百年慶 ，，IEEE 舉行FET100：紀念場效應電晶體誕生 100 週年」 活動:

https://eds.ieee.org/about-eds/fet100-year-celebration......

是以「The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925」

https://en.wikipedia.org/wiki/Field-effect_transistor

也就是FET概念誕生那一年為元年來算的樣子

Lilienfeld的所發明的FET概念詳見《從摩爾旅程：電晶體數目爆增的神奇魔力》摘錄的內容。